Books & Review

Editors

1. 斗内政吉 監修, "テラヘルツ波新産業(New Terahertz Industry)" 普及版/Popular Edition, 株式会社シーエムシー出版, 2017-1

2. 斗内政吉 監修, "テラヘルツ波新産業", 株式会社シーエムシー出版, 2011

3. 斗内政吉 監修, "テラヘルツ技術" (Terahertz Technology),テラヘルツテクノロジー動向調査専門委員会編, オーム社, 2006

4. T. Kobayashi, H. Hayakawa, M. Tonouchi, eds.“Vortex Electronics and SQUIDs (Topics in Applied Physics, 91)”,Springer Verlag, Germany, 2003

Co-authors

1. Masayoshi Tonouchi, “Sate-of-the-Art of Terahertz Science and Technology”, Frontiers in Optical Methods , Vol.180 , Pages153-166 , 2013-12

2. N. Kida, H. Murakami and M. Tonouchi, "Terahertz optics in strongly correlated electron systems"in Terahertz Optelectronics (Topics in Applied Physics, 97) edited by K. Sakai, Springer Verlag, Germany, pages 271-331, 2005

3. M. Tonouchi, G. Oya, Y. Matsuda and K. Kumagai,"New aspect of vortex in HTSC" in Vortex Electronics and SQUIDs (Topics in Applied Physics, 91) edited by T. Kobayashi, H. Hayakawa, M. Tonouchi, Springer Verlag, Germany, pages 103-139, 2003

4. S. Ohshima, K. Tanabe, T. Morishita and M. Tonouchi,"Observation of vortices" in Vortex Electronics and SQUIDs (Topics in Applied Physics, 91) edited by T. Kobayashi, H. Hayakawa, M. Tonouchi,Springer Verlag, Germany, pages 53 - 102, 2003

5. N. Kawasaki, T. Yoshimura, M. Tonouchi, M. Tani, K. Sakai, and H. Katahama,“Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline LT-GaAs” in Polycrystalline Semiconductors VII - Solid State Phenomena, Volume 93, edited by T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner, Trans Tech Publications Inc, Switzerland, pages 367-374, 2003

6. M. Tonouchi,“Optical Vortex Generation in High Tc Superconductor”in Vortex Physics, Studies of High Temperature Superconductors No. 42, edited by. A. V. Narlikar Nova Science Publishers, New York, 2002, pages 109-138

[In Japanese]
1. 北岸恵子, “テラヘルツ技術の進展と非破壊検査技術”, 電気学会技術報告-テラヘルツ波を用いた非破壊検査技術調査専門委員会編 , No.1432 , pp46-4, 52-55 , 2018-7

2. 斗内政吉,“電気電子材料”,伊藤利道編,pages 93-115,177-185, 190-197,2016

3. 斗内政吉,“テラヘルツ技術総覧”、テラヘルツテクノロジーフォーラム編, 有限会社エヌジーティー, pages 113-116, 435-437, 445-449, 507-516, 2 007

4. 斗内政吉,“光物性の基礎と応用”、光物性研究会組織委員会編, 株式会社オプトロニクス社, pages 325-342, 2006

5. 斗内政吉,“材料と評価の最前線”日本材料学会編,培風館,pages 131−142, 2001

Review

1. 日本レーザー医学会誌, 2019 年 39 巻 4 号 p. 325-328, 斗内 政吉、総説「テラヘルツ波が拓く医療・創薬・バイオセンシング」
2. 斗内 政吉, “テラヘルツ波技術展望(Prosepect for Terahertz Technology)”, オレオサイエンス , Vol.18 , No.9 , pp7-11 , 2018-9
3. 北岸恵子、芹田和則, “最新のテラヘルツ測定技術(Novel Techniques of Treahertz Spectroscopy and Imaging)”, オレオサイエンス , Vol.18 , No.9 , pp13-18 , 2018-9
4. 北岸恵子, “高空間分解能、高感度テラヘルツ分光のバイオ分野への応用の試み”, 生産と技術 , 巻vol. 69 , 号No.2 , pp98-100 , 2017-4
5. 斗内 政吉, “テラヘルツ波新産業創製への展望”, 化学工業社 , 巻68 , 号3 , pp165-169 , 2017-3
6. Iwao Kawayama, Caihong Zhang, Huabing Wang, Masayoshi Tonouchi, “Study on terahertz emission and optical/terahertz pulse responses with superconductors”, Superconductor Science and Technology , Vol.26 , No.9 , Pages093002 , 2013-9
7. Kawayama, I., Zhang, C., Wang, H., Tonouchi, M.; Study on terahertz emission and opti-cal/terahertz pulse responses with superconductors; Superconductor Science and Technology, 26, 93002, 2013.
8. 芹田和則、斗内政吉、“レーザー走査型テラヘルツ波2次元面放射イメージングシステム” レーザー学会学会誌レーザー研究, 40(7), 496, 2012
9. THz Sci. Technol., THz Sci. Technol.,政吉、“銅酸化物超伝導体および誘電体のテラヘルツ分光”, 固体物理 46(11), 725-733, 2011
10. 斗内政吉、“テラヘルツ波科学技術の最前線”, 真空 53, 296-300, 2010.
11. 斗内政吉、“テラヘルツ波技術が拓く新産業”, 光学 38, 64-71, 2009.
12. 斗内政吉、“BiFeO3薄膜からのテラヘルツ波発生と光新機能”、マテリアルインテグレーション 22(3), 22-29, 2009.
13. 斗内政吉,鈴木正人,川山巌,村上博成, 高橋義典,松川健,吉村政志,森勇介,北岡康夫,佐々木孝友、“有機非線形光学結晶を用いたフェムト秒光パルス励起テラヘルツ電磁波発生”、レーザー研究 37, 355-360, 2009.
14. Tonouchi, M.; Prospect for research and development of terahertz technology in future; Journal of the National Institute of Information and Communications Technology, 55, 171, 2008.
15. M. Tonouchi, “Cutting-edge terahertz technology”, Nature Photonics , Vol.1 , No.2 , Pages97-105 , 2007-2
16. Tonouchi, M.; Cutting-edge terahertz technology; Nature Photonics, 1, 97, 2007.
17. 斗内政吉 “テラヘルツ波技術の現状と展望”, 応用物理 75, 160-168, 2006.
18. 斗内政吉:“テラヘルツテクノロジーの将来展望”, レーザー研究 33, 814-818, 2005.
19. 藤巻 朗、斗内政吉、前田京剛, “銅酸化物接合におけるジョセフソン・デバイス研究の現状”, 固体物理 39(10), 817-828, 2004.
20. 小林猛、斗内政吉、“高温超伝導エレクトロニクスの最近の動向” 応用物理71(1), 6-16, 2002.
21. 斗内政吉,“テラヘルツ放射顕微鏡開発の最近の進展と産業応用の可能性”、応用物理第84巻第12号、1101(2015)
22. 斗内政吉、“BiFeO3薄膜からのテラヘルツ波発生と光新機能” マテリアルインテグレーション22(02)、
23. 斗内 政吉,貴田 徳明,紀和 利彦,富成 征弘,川山 巌,村上 博成,”強相関電子系材料からのテラヘルツ電磁波放射と関連物性”, レーザー研究 30, 370-375, 2002.
24. 斗内 政吉,貴田 徳明,紀和 利彦,富成 征弘,川山 巌,村上 博成、”強相関電子系材料からのテラヘルツ電磁波放射と関連物性”、レーザー研究 30(7), 370-375, 2002
25. 萩行正憲,斗内政吉,谷 正彦,阪井清美、“高温超伝導体からのテラヘルツ電磁波発生” レーザー研究, 26(7), 536-540, 1998.

Publication of FY2019 (Papers and Invited talks)

Papers of FY2019

1. T. Mochizuki, A. Ito, H. Nakanishi, K. Tanahashi, I. Kawayama, M. Tonouchi, K. Shirasawa, and H. Takato, “Noncontact evaluation of electrical passivation of oxidized silicon using laser terahertz emission microscope and corona charging”, Journal of Applied Physics , Vol.125 , No.151615 , (2019-4)

2. Hironaru Murakami, Kenta Mizui, and Masayoshi Tonouchi, “High-sensitivity photoconductive detectors with wide dipole electrodes for low frequency THz wave detection”, Journal of Applied Physics , Vol.125 , No.15 , (2019-4)


Invited Oral of FY2019

1. [Plenay] Filchito Renee G. Bagsican, Iwao Kawayama, Hironaru Murakami, Masayoshi Tonouchi, “Laser terahertz emission microscopy as an investigative tool for low-dimensional materials”, 1st International Conference in Science and Mathematics, Philippines, 2019/4/11-4/13

2. Kazunori Serita, Kosuke Okada, and Masayoshi Tonouchi, “Scanning Laser Terahertz Near-Field Emission System for Bio/Chemical Sensing”, 2nd Photonic and OptoElectronic Materials Conference, London, England, 2019/4/9-4/12

Patents (Abroad)

<Issued>
1. Inspection apparatus and inspection method; Patent number
US9383321
2. MODIFICATION PROCESSING DEVICE, MODIFICATION MONITORING DEVICE AND MODIFICATION PROCESSING METHOD; Patent number
US20160093539
3. Inspecting device and inspecting method; Patent number
US9234934
4. Inspecting device and inspecting method; Patent number
US9151669
5. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20150276607
6. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20150236642
7. Inspection apparatus and inspection method; Patent number
US9103870
8. INSPECTION APPRATUS AND INSPECTION METHOD; Patent number
US20150162872
9. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20150053869
10. Inspection apparatus and inspection method; Patent number
EP2840382
11. Semiconductor inspection method and semiconductor inspection apparatus;
Patent number
US8941824
12. PHOTO DEVICE INSPECTION APPARATUS AND PHOTO DEVICE INSPECTION METHOD;
Patent number
US20150015297
13. Photo device inspection apparatus and photo device inspection method; Patent number
EP2824469
14. Inspection apparatus and inspection method; Patent number
US8872114
15. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
US20140253911
16. Inspecting device and inspecting method; Patent Application Patent number
EP2775288
17. Inspecting device and inspecting method; Patent number
EP2772750
18. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
US20140239182
19. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
US20140002125
20. Inspecting device and inspecting method; Patent number
EP2679987
21. Electromagnetic radiation generating element, electromagnetic radiation generating device, and method of generating electromagnetic radiation; Patent number
US8530868
22.
 INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20130222004
23. Inspection apparatus and inspection method; Patent number
EP2631635
24. Element, device and method for generating electromagnetic radiation in the terahertz domain;Patent number
EP2607945
25. ELECTROMAGNETIC RADIATION GENERATING ELEMENT, ELECTROMAGNETIC RADIATION GENERATING DEVICE, AND METHOD OF GENERATING ELECTROMAGNETIC RADIATION; Patent number
US20130153793
26. SEMICONDUCTOR INSPECTION METHOD AND SEMICONDUCTOR INSPECTION APPARATUS; Patent number
US20130083319
27. Semiconductor inspection method and semiconductor inspection apparatus;
Patent number
EP2574906
28. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20130015368
29. Inspection apparatus and inspection method; Patent number
EP2546634
30. SEMICONDUCTOR INSPECTION DEVICE AND INSPECTION METHOD;
Patent number
US20110216312
31. Electric-field distribution measurement method and apparatus for semiconductor device;
Patent number
US7466151
32. Method and apparatus for diagnosing fault in semiconductor device; Patent number
US7173447
33. Method and device for measuring electric field distribution of semiconductor device;
Patent number
US20070018634
34. METHOD AND DEVICE FOR MEASURING ELECTRIC FIELD DISTRIBUTION OF SEMICONDUCTOR DEVICE; Patent number
EP1679522
35. Method and apparatus for diagnosing fault in semiconductor device; Patent number
US20060006886
36. Method and apparatus for inspecting wire breaking of integrated circuit;
Patent number
US6980010
37. METHOD AND DEVICE FOR MEASURING ELECTRIC FIELD DISTRIBUTION OF SEMICONDUCTOR DEVICE; Patent number
WO2005022180
38. Method and apparatus for inspecting wire breaking of integrated circuit;
Patent number
US20040246011
39.Method and apparatus for inspecting wire breaking of an integrated circuit; Patent number
EP1441233
40. Method for etching superconductor materials; Patent number
US4996191