Books

Editors

1 斗内政吉 監修, "テラヘルツ波新産業(New Terahertz Industry)" 普及版/Popular Edition, 株式会社シーエムシー出版, 2016

2 Masayoshi Tonouchi, “Sate-of-the-Art of Terahertz Science and Technology”, Frontiers in Optical Methods , Vol.180 , Pages153-166 , 2013-12

3 斗内政吉 監修, "テラヘルツ波新産業", 株式会社シーエムシー出版, 2011

4 斗内政吉 監修, "テラヘルツ技術" (Terahertz Technology),テラヘルツテクノロジー動向調査専門委員会編, オーム社, 2006

5 T. Kobayashi, H. Hayakawa, M. Tonouchi, eds.“Vortex Electronics and SQUIDs (Topics in Applied Physics, 91)”,Springer Verlag, Germany, 2003

Co-authors

1 N. Kida, H. Murakami and M. Tonouchi, "Terahertz optics in strongly correlated electron systems" in Terahertz Optelectronics (Topics in Applied Physics, 97) edited by K. Sakai, Springer Verlag, Germany, pages 271 - 331, 2005

2 M. Tonouchi, G. Oya, Y. Matsuda and K. Kumagai,"New aspect of vortex in HTSC" in Vortex Electronics and SQUIDs (Topics in Applied Physics, 91) edited by T. Kobayashi, H. Hayakawa, M. Tonouchi, Springer Verlag, Germany, pages 103 - 139, 2003

3 S. Ohshima, K. Tanabe, T. Morishita and M. Tonouchi, "Observation of vortices" in Vortex Electronics and SQUIDs (Topics in Applied Physics, 91) edited by T. Kobayashi, H. Hayakawa, M. Tonouchi,Springer Verlag, Germany, pages 53 - 102, 2003

4 N. Kawasaki, T. Yoshimura, M. Tonouchi, M. Tani, K. Sakai, and H. Katahama,“Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline LT-GaAs” in Polycrystalline Semiconductors VII - Solid State Phenomena, Volume 93, edited by T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner, Trans Tech Publications Inc, Switzerland, pages 367-374, 2003

5 M. Tonouchi,“Optical Vortex Generation in High Tc Superconductor” in Vortex Physics, Studies of High Temperature Superconductors No. 42, edited by. A. V. Narlikar Nova Science Publishers, New York, 2002, pages 109-138

[In Japanese]
1 斗内政吉,“電気電子材料”,伊藤利道編,pages 93-115,177-185, 190-197,2016

2 斗内政吉,“テラヘルツ技術総覧”、テラヘルツテクノロジーフォーラム編, 有限会社エヌジーティー, pages 113-116, 435-437, 445-449, 507-516, 2 007

3 斗内政吉,“光物性の基礎と応用”、光物性研究会組織委員会編, 株式会社オプトロニクス社, pages 325-342, 2006

4 斗内政吉,“材料と評価の最前線”日本材料学会編,培風館,pages 131−142, 2001

Publication of FY2017 (Papers and Invited talks)

Papers of FY2017

1. Manjakavahoaka Razanoelina, Shohei Ohashi, Iwao Kawayama, Hironaru Murakami, Annick F. Dégardin, Alain J. Kreisler, and Masayoshi Tonouchi, “Measurable lower limit of thin film conductivity with parallel plate waveguide terahertz time domain spectroscopy”, Optics Letters , Vol.42 , No.15 , Pages(2017-8)

2. Kazunori Serita, Juraj Darmo, Iwao Kawayama, Hironaru Murakami, Masayoshi Tonouchi , “Direct Measurements of Terahertz Meta-atoms with Near-Field Emission of Terahertz Waves”, Journal of Infrared, Millimeter, and Terahertz Waves , Pages(2017-7)

3. Caihong Zhang, Jingbo Wu, Biaobing Jin, Xiaoqing Jia, Lin Kang, Weiwei Xu, Huabing Wang, Jian Chen, Masoyoshi Tonouchi, and Peiheng Wu, “Tunable electromagnetically induced transparency from a superconducting terahertz metamaterial”, Appl. Phys. Lett. , Vol.110 , No.24 , Pages(2017-6)

4. Filchito Renee Bagsican, Andrew Winchester, Sujoy Ghosh, Xiang Zhang, Lulu Ma§, Minjie Wang, Hironaru Murakami, Saikat Talapatra, Robert Vajtai, Pulickel M. Ajayan, Junichiro Kono, Masayoshi Tonouchi, Iwao Kawayama, “Adsorption energy of oxygen molecules on graphene and two-dimensional tungsten disulfide”, Scientific Reports , Vol.7 , No.1774 , (2017-5)

5. Toshimitsu Mochizuki, Akira Ito, Jonathon Mitchell, Hidetoshi Nakanishi, Katsuto Tanahashi, Iwao Kawayama, Masayoshi Tonouchi, Katsuhiko Shirasawa, Hidetaka Takato, “Probing the surface potential of oxidized silicon by assessing terahertz emission”, Applied Physics Letters , Vol.110 , No.16 , Pages(2017-4)

6. Yuji Sakai, Iwao Kawayama, Hidetoshi Nakanishi, Masayoshi Tonouchi, “Polarization imaging of imperfect m-plane GaN surfaces”, APL Photonics , Vol.2 , No.4 , (2017-4)


Invited Oral of FY2017

1. 斗内 政吉, “GaAsを用いた高感度テラヘルツバイオチップ開発に向けて”, 第78回応用物理学会秋季学術講演会, 2017/9/5-9/8, 福岡国際会議場

2. (基調講演) 斗内 政吉, “テラヘルツ放射顕微鏡による酸化物および関連物質の評価”, 第78回応用物理学会秋季学術講演会, 2017/9/5-9/8, 福岡国際会議場

3. I. Kawayama, “Polarization imaging of GaN using laser terahertz emission microscopy”, 4th Japan-Korea International Symposium on Materials Science and Technology 2017, 2017/8/24-8/26, Osaka, Japan

4. I. Kawayama, “Laser Terahertz Emission Microscopy for Inspection of Solar Cells”, 2017 International Symposium for Advanced MaterialsS Research, 2017/8/18-8/21, Sun Moon Lake, Taiwan

5. M. Tonouchi, “Laser Terahertz Emission Microscope”, The 12th Conference on Lasers and Electro-Optics Pacific Rim, 2017/7/31-2017/8/4, Sands Expo and Convention Centre, Singapore

6. I. Kawayama, “Terahertz Spectroscopy of Graphene”, Collaborative Conference on Materials Research (CCMR) 2017, 2017/6/26-2017/6/30, International Convention Center (ICC) Jeju , Korea

7. M. Tonouchi, “Laser terahertz emission microscope”, International Conference on Terahertz Emission, Metamaterials and Nanophotonics 2017, 2017/5/28-2017/6/2, Palazzo Carnoldi, Venice (Italy)

Patents (Abroad)

<Issued>
1. Inspection apparatus and inspection method; Patent number
US9383321
2. MODIFICATION PROCESSING DEVICE, MODIFICATION MONITORING DEVICE AND MODIFICATION PROCESSING METHOD; Patent number
US20160093539
3. Inspecting device and inspecting method; Patent number
US9234934
4. Inspecting device and inspecting method; Patent number
US9151669
5. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20150276607
6. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20150236642
7. Inspection apparatus and inspection method; Patent number
US9103870
8. INSPECTION APPRATUS AND INSPECTION METHOD; Patent number
US20150162872
9. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20150053869
10. Inspection apparatus and inspection method; Patent number
EP2840382
11. Semiconductor inspection method and semiconductor inspection apparatus;
Patent number
US8941824
12. PHOTO DEVICE INSPECTION APPARATUS AND PHOTO DEVICE INSPECTION METHOD;
Patent number
US20150015297
13. Photo device inspection apparatus and photo device inspection method; Patent number
EP2824469
14. Inspection apparatus and inspection method; Patent number
US8872114
15. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
US20140253911
16. Inspecting device and inspecting method; Patent Application Patent number
EP2775288
17. Inspecting device and inspecting method; Patent number
EP2772750
18. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
US20140239182
19. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
US20140002125
20. Inspecting device and inspecting method; Patent number
EP2679987
21. Electromagnetic radiation generating element, electromagnetic radiation generating device, and method of generating electromagnetic radiation; Patent number
US8530868
22.
 INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20130222004
23. Inspection apparatus and inspection method; Patent number
EP2631635
24. Element, device and method for generating electromagnetic radiation in the terahertz domain;Patent number
EP2607945
25. ELECTROMAGNETIC RADIATION GENERATING ELEMENT, ELECTROMAGNETIC RADIATION GENERATING DEVICE, AND METHOD OF GENERATING ELECTROMAGNETIC RADIATION; Patent number
US20130153793
26. SEMICONDUCTOR INSPECTION METHOD AND SEMICONDUCTOR INSPECTION APPARATUS; Patent number
US20130083319
27. Semiconductor inspection method and semiconductor inspection apparatus;
Patent number
EP2574906
28. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
US20130015368
29. Inspection apparatus and inspection method; Patent number
EP2546634
30. SEMICONDUCTOR INSPECTION DEVICE AND INSPECTION METHOD;
Patent number
US20110216312
31. Electric-field distribution measurement method and apparatus for semiconductor device;
Patent number
US7466151
32. Method and apparatus for diagnosing fault in semiconductor device; Patent number
US7173447
33. Method and device for measuring electric field distribution of semiconductor device;
Patent number
US20070018634
34. METHOD AND DEVICE FOR MEASURING ELECTRIC FIELD DISTRIBUTION OF SEMICONDUCTOR DEVICE; Patent number
EP1679522
35. Method and apparatus for diagnosing fault in semiconductor device; Patent number
US20060006886
36. Method and apparatus for inspecting wire breaking of integrated circuit;
Patent number
US6980010
37. METHOD AND DEVICE FOR MEASURING ELECTRIC FIELD DISTRIBUTION OF SEMICONDUCTOR DEVICE; Patent number
WO2005022180
38. Method and apparatus for inspecting wire breaking of integrated circuit;
Patent number
US20040246011
39.Method and apparatus for inspecting wire breaking of an integrated circuit; Patent number
EP1441233
40. Method for etching superconductor materials; Patent number
US4996191