Books & Review

Editors

1. 斗内政吉 監修, "テラヘルツ波新産業(New Terahertz Industry)" 普及版/Popular Edition, 株式会社シーエムシー出版, 2017-1

2. 斗内政吉 監修, "テラヘルツ波新産業", 株式会社シーエムシー出版, 2011

3. 斗内政吉 監修, "テラヘルツ技術" (Terahertz Technology),テラヘルツテクノロジー動向調査専門委員会編, オーム社, 2006

4. T. Kobayashi, H. Hayakawa, M. Tonouchi, eds.“Vortex Electronics and SQUIDs (Topics in Applied Physics, 91)”,Springer Verlag, Germany, 2003

Co-authors

1. Masayoshi Tonouchi, “Sate-of-the-Art of Terahertz Science and Technology”, Frontiers in Optical Methods , Vol.180 , Pages153-166 , 2013-12

2. N. Kida, H. Murakami and M. Tonouchi, "Terahertz optics in strongly correlated electron systems"in Terahertz Optelectronics (Topics in Applied Physics, 97) edited by K. Sakai, Springer Verlag, Germany, pages 271-331, 2005

3. M. Tonouchi, G. Oya, Y. Matsuda and K. Kumagai,"New aspect of vortex in HTSC" in Vortex Electronics and SQUIDs (Topics in Applied Physics, 91) edited by T. Kobayashi, H. Hayakawa, M. Tonouchi, Springer Verlag, Germany, pages 103-139, 2003

4. S. Ohshima, K. Tanabe, T. Morishita and M. Tonouchi,"Observation of vortices" in Vortex Electronics and SQUIDs (Topics in Applied Physics, 91) edited by T. Kobayashi, H. Hayakawa, M. Tonouchi,Springer Verlag, Germany, pages 53 - 102, 2003

5. N. Kawasaki, T. Yoshimura, M. Tonouchi, M. Tani, K. Sakai, and H. Katahama,“Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline LT-GaAs” in Polycrystalline Semiconductors VII - Solid State Phenomena, Volume 93, edited by T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner, Trans Tech Publications Inc, Switzerland, pages 367-374, 2003

6. M. Tonouchi,“Optical Vortex Generation in High Tc Superconductor”in Vortex Physics, Studies of High Temperature Superconductors No. 42, edited by. A. V. Narlikar Nova Science Publishers, New York, 2002, pages 109-138

[In Japanese]
1. 北岸恵子, “テラヘルツ技術の進展と非破壊検査技術”, 電気学会技術報告-テラヘルツ波を用いた非破壊検査技術調査専門委員会編 , No.1432 , pp46-4, 52-55 , 2018-7

2. 斗内政吉,“電気電子材料”,伊藤利道編,pages 93-115,177-185, 190-197,2016

3. 斗内政吉,“テラヘルツ技術総覧”、テラヘルツテクノロジーフォーラム編, 有限会社エヌジーティー, pages 113-116, 435-437, 445-449, 507-516, 2 007

4. 斗内政吉,“光物性の基礎と応用”、光物性研究会組織委員会編, 株式会社オプトロニクス社, pages 325-342, 2006

5. 斗内政吉,“材料と評価の最前線”日本材料学会編,培風館,pages 131−142, 2001

Review

1. 日本レーザー医学会誌, 2019 年 39 巻 4 号 p. 325-328, 斗内 政吉、総説「テラヘルツ波が拓く医療・創薬・バイオセンシング」
2. 斗内 政吉, “テラヘルツ波技術展望(Prosepect for Terahertz Technology)”, オレオサイエンス , Vol.18 , No.9 , pp7-11 , 2018-9
3. 北岸恵子、芹田和則, “最新のテラヘルツ測定技術(Novel Techniques of Treahertz Spectroscopy and Imaging)”, オレオサイエンス , Vol.18 , No.9 , pp13-18 , 2018-9
4. 北岸恵子, “高空間分解能、高感度テラヘルツ分光のバイオ分野への応用の試み”, 生産と技術 , 巻vol. 69 , 号No.2 , pp98-100 , 2017-4
5. 斗内 政吉, “テラヘルツ波新産業創製への展望”, 化学工業社 , 巻68 , 号3 , pp165-169 , 2017-3
6. Iwao Kawayama, Caihong Zhang, Huabing Wang, Masayoshi Tonouchi, “Study on terahertz emission and optical/terahertz pulse responses with superconductors”, Superconductor Science and Technology , Vol.26 , No.9 , Pages093002 , 2013-9
7. Kawayama, I., Zhang, C., Wang, H., Tonouchi, M.; Study on terahertz emission and opti-cal/terahertz pulse responses with superconductors; Superconductor Science and Technology, 26, 93002, 2013.
8. 芹田和則、斗内政吉、“レーザー走査型テラヘルツ波2次元面放射イメージングシステム” レーザー学会学会誌レーザー研究, 40(7), 496, 2012
9. THz Sci. Technol., THz Sci. Technol.,政吉、“銅酸化物超伝導体および誘電体のテラヘルツ分光”, 固体物理 46(11), 725-733, 2011
10. 斗内政吉、“テラヘルツ波科学技術の最前線”, 真空 53, 296-300, 2010
11. 斗内政吉、“テラヘルツ波技術が拓く新産業”, 光学 38, 64-71, 2009
12. 斗内政吉、“BiFeO3薄膜からのテラヘルツ波発生と光新機能”、マテリアルインテグレーション 22(3), 22-29, 2009
13. 斗内政吉,鈴木正人,川山巌,村上博成, 高橋義典,松川健,吉村政志,森勇介,北岡康夫,佐々木孝友、“有機非線形光学結晶を用いたフェムト秒光パルス励起テラヘルツ電磁波発生”、レーザー研究 37, 355-360, 2009
14. Tonouchi, M.; Prospect for research and development of terahertz technology in future; Journal of the National Institute of Information and Communications Technology, 55, 171, 2008
15. M. Tonouchi, “Cutting-edge terahertz technology”, Nature Photonics , Vol.1 , No.2 , Pages97-105 , 2007-2
16. Tonouchi, M.; Cutting-edge terahertz technology; Nature Photonics, 1, 97, 2007
17. 斗内政吉 “テラヘルツ波技術の現状と展望”, 応用物理 75, 160-168, 2006
18. 斗内政吉:“テラヘルツテクノロジーの将来展望”, レーザー研究 33, 814-818, 2005
19. 藤巻 朗、斗内政吉、前田京剛, “銅酸化物接合におけるジョセフソン・デバイス研究の現状”, 固体物理 39(10), 817-828, 2004
20. 小林猛、斗内政吉、“高温超伝導エレクトロニクスの最近の動向” 応用物理71(1), 6-16, 2002
21. 斗内政吉,“テラヘルツ放射顕微鏡開発の最近の進展と産業応用の可能性”、応用物理第84巻第12号、1101(2015)
22. 斗内政吉、“BiFeO3薄膜からのテラヘルツ波発生と光新機能” マテリアルインテグレーション(02)
23. 斗内 政吉,貴田 徳明,紀和 利彦,富成 征弘,川山 巌,村上 博成,”強相関電子系材料からのテラヘルツ電磁波放射と関連物性”, レーザー研究 30, 370-375, 2002
24. 斗内 政吉,貴田 徳明,紀和 利彦,富成 征弘,川山 巌,村上 博成、”強相関電子系材料からのテラヘルツ電磁波放射と関連物性”、レーザー研究 30(7), 370-375, 2002
25. 萩行正憲,斗内政吉,谷 正彦,阪井清美、“高温超伝導体からのテラヘルツ電磁波発生” レーザー研究(7), 536-540, 1998

Publication of FY2021 (Papers and Invited talks)

Papers of FY2021

1. Jiangpeng Dong, Kazunori Serita, Fumikazu Murakami, Iwao Kawayama, Han Sun, Binbin Zhang, Masayoshi Tonouchi, Wanqi Jie, Yadong Xu, “Laser terahertz emission microscopy revealing the local fluctuation of terahertz generation induced by Te inclusion”, Appl. Phys. Letters, Vol.118, Pages131113(2021-4) ; https://doi.org/10.1063/5.0045266

2. Kosuke Okada, Quentin Cassar, Hironaru Murakami, Gaëtan MacGrogan, Jean-Paul Guillet, Patrick Mounaix, Masayoshi Tonouchi, and Kazunori Serita, “Label-Free Observation of Micrometric Inhomogeneity of Human Breast Cancer Cell Density Using Terahertz Near-Field Microscopy”, Photonics, Vol.8, No.5, Pages151(2021-5) ; 10.3390/photonics8050151

3. A. Chaudhuri, R. Rakshit, K. Serita, M. Tonouchi and K. Mandal, “Electromagnetic Response of SiO₂@Fe₃O₄ Core–Shell Nanostructures in the THz Regime”, IEEE Transactions on Magnetics, Vol.57, No.5, Pages1-6(2021-5) ; 10.1109/TMAG.2021.3056575

4. Abdul Mannan, Filchito Renee G. Bagsican, Kota Yamahara, Iwao Kawayama, Hironaru Murakami, Heiko Bremers, Uwe Rossow, Andreas Hangleiter, Dmitry Turchinovich, and Masayoshi Tonouchi, “Ultrafast Terahertz Nanoseismology of GaInN/GaN Multiple Quantum Wells”, Advanced Optical Materials, Pages2100258(2021-5) ; https://doi.org/10.1002/adom.202100258

5. Tomoaki Nambu, Takumi Nagata, Soshi Umeda, Keishi Shiomi, Yasufumi Fujiwara, Toshiki Hikosaka, Abdul Mannan, Filchito Renee G Bagsican, Kazunori Serita, Iwao Kawayama, Masayoshi Tonouchi, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama, “Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure”, Applied Physics Express, Vol.14, No.6, Pages61004(2021-5) ; https://doi.org/10.35848/1882-0786/abff9e

6. Chen Gong, Takahiro Teramoto, and Masayoshi Tonouch, “Observation of the Terahertz Pulse Shaping Due to Intensity-Induced Additional Phase in Two-Color Filaments”, Journal of Infrared, Millimeter, and Terahertz Waves, (2021-6) ; https://doi.org/10.1007/s10762-021-00797-4

7. Abdul Mannan, Kota Yamahara, Filchito Renee G. Bagsican, Kazunori Serita, , Hironaru Murakami, Iwao Kawayama, Masataka Higashiwaki, and Masayoshi Tonouchi, “Terahertz emission spectroscopy of GaN-based heterostructures”, Journal of Journal of Applied Physics, Vol.129, Pages245702(2021-) ; https://doi.org/10.1063/5.0047402

8. Dongxun Yang and Masayoshi Tonouchi, “Understanding terahertz emission properties from a metal–insulator–semiconductor structure upon femtosecond laser illumination”, Journal of Applied Physics, Vol.130, Pages055701(2021-) ; https://doi.org/10.1063/5.0055671

9. Hidetoshi Nakanishi, Tatsuhiko Nishimura, Iwao Kawayama, Masayoshi Tonouchi, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, “Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy”, Journal of Applied Physics , Vol.130, Pages115305(2021-9) ; https://doi.org/10.1063/5.0055671

10. Abdul Mannan, Ryotaro Inoue, Fumikazu Murakami, Kazunori Serita, Hironaru Murakami, and Masayoshi Tonouchi, “A better understanding of terahertz emission from semiconductor surfaces with a phased-array effect”, AIP Advances, Vol.11, Pages125021(2021-10) ; https://doi.org/10.1063/5.0077054


Invited Oral of FY2021

1. Masayoshi Tonouchi, “Emission Spectroscopy of Wide Gap Semiconductors”, The 2021 Spring Meeting of the European Materials Research Society , VIRTUAL Conference, 2021/5/31 - 2021/6/3

2. 芹田和則, “走査型テラヘルツ波点光源顕微鏡の開発と非侵襲・非標識がん診断応用への挑戦”, 光・量子ビーム科学合同シンポジウム2021, 大阪大学レーザー科学研究所&オンライン, 2021/6/22

3. A. Mannan, F. R. G. Bagsican, 山原滉太, 川山巌, 村上博成, H. Bremers, U. Rossow, A. Hangleiter, D. Turchinovich, 斗内政吉, “GaInN/GaN 多層量子井戸構造からの多機能光励起テラヘルツ波放射”, 電子情報通信学会 テラヘルツ応用システム研究会, オンライン, 2021/8/5

4. Masayoshi Tonouchi, “Laser Terahertz Emission Microscope as a Killer Tool”, The International Conference on Infrared, Millimeter, and Terahertz Waves 2021, Chengdu, China (ONLINE), 2021/8/29-2021/9/3

5. Masayoshi Tonouchi, “Multi-Functional Optical Responses of InGaN/GaN Multiple Quantum Wells studied by Laser Terahertz Emission Microscopy”, International Symposium on Imaging, Sensing, and Optical Memory, Kobe, Japan, 2021/10/3-2021/10-6

6. Masayoshi Tonouchi & Kazunori Serita, “Meta-atoms for TerahertzMicrofluidic Chips”, The virtual 2021 FiO LS Conference, Online, 2021/10/31-2021/11/4

7. A. Mannan, H. Murakami, A. Hangleiter, D. Turchinovich, Masayoshi Tonouchi, “Nano-seismology on GaInN/GaN MQWs sandwiched in GaN medium by LTEM”, The 9th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies , Hybride Online (Sendai, Japan), 2021/11/1-2021/11/4

8. 芹田和則, “微少量テラヘルツバイオセンシング技術が切り拓く新しいバイオメディカル応用”, マイクロウェーブ展2021, パシフィコ横浜, 2021/11/24-2021/11/26

9. Masayoshi Tonouchi, “How to use terahertz emission spectroscopy and imaging in real onsite semiconductor R&D scenes”, Smart NanoMaterials 2021, Hybride Online (Paris), 2021/12/7-2021/12/10

10. 芹田和則, “走査型テラヘルツ波点光源顕微鏡によるバイオイメージング・センシング技術”, レーザー学会 学術講演会第42回年次大会, 神戸国際会議場, 2022/1/12-2022/1/14

Patents (Abroad)

<Issued>
1. Inspection apparatus and inspection method; Patent number
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2. MODIFICATION PROCESSING DEVICE, MODIFICATION MONITORING DEVICE AND MODIFICATION PROCESSING METHOD; Patent number
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3. Inspecting device and inspecting method; Patent number
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4. Inspecting device and inspecting method; Patent number
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5. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
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6. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
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7. Inspection apparatus and inspection method; Patent number
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8. INSPECTION APPRATUS AND INSPECTION METHOD; Patent number
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9. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
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10. Inspection apparatus and inspection method; Patent number
EP2840382
11. Semiconductor inspection method and semiconductor inspection apparatus;
Patent number
US8941824
12. PHOTO DEVICE INSPECTION APPARATUS AND PHOTO DEVICE INSPECTION METHOD;
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US20150015297
13. Photo device inspection apparatus and photo device inspection method; Patent number
EP2824469
14. Inspection apparatus and inspection method; Patent number
US8872114
15. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
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16. Inspecting device and inspecting method; Patent Application Patent number
EP2775288
17. Inspecting device and inspecting method; Patent number
EP2772750
18. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
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19. INSPECTING DEVICE AND INSPECTING METHOD; Patent number
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20. Inspecting device and inspecting method; Patent number
EP2679987
21. Electromagnetic radiation generating element, electromagnetic radiation generating device, and method of generating electromagnetic radiation; Patent number
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22.
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23. Inspection apparatus and inspection method; Patent number
EP2631635
24. Element, device and method for generating electromagnetic radiation in the terahertz domain;Patent number
EP2607945
25. ELECTROMAGNETIC RADIATION GENERATING ELEMENT, ELECTROMAGNETIC RADIATION GENERATING DEVICE, AND METHOD OF GENERATING ELECTROMAGNETIC RADIATION; Patent number
US20130153793
26. SEMICONDUCTOR INSPECTION METHOD AND SEMICONDUCTOR INSPECTION APPARATUS; Patent number
US20130083319
27. Semiconductor inspection method and semiconductor inspection apparatus;
Patent number
EP2574906
28. INSPECTION APPARATUS AND INSPECTION METHOD; Patent number
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29. Inspection apparatus and inspection method; Patent number
EP2546634
30. SEMICONDUCTOR INSPECTION DEVICE AND INSPECTION METHOD;
Patent number
US20110216312
31. Electric-field distribution measurement method and apparatus for semiconductor device;
Patent number
US7466151
32. Method and apparatus for diagnosing fault in semiconductor device; Patent number
US7173447
33. Method and device for measuring electric field distribution of semiconductor device;
Patent number
US20070018634
34. METHOD AND DEVICE FOR MEASURING ELECTRIC FIELD DISTRIBUTION OF SEMICONDUCTOR DEVICE; Patent number
EP1679522
35. Method and apparatus for diagnosing fault in semiconductor device; Patent number
US20060006886
36. Method and apparatus for inspecting wire breaking of integrated circuit;
Patent number
US6980010
37. METHOD AND DEVICE FOR MEASURING ELECTRIC FIELD DISTRIBUTION OF SEMICONDUCTOR DEVICE; Patent number
WO2005022180
38. Method and apparatus for inspecting wire breaking of integrated circuit;
Patent number
US20040246011
39.Method and apparatus for inspecting wire breaking of an integrated circuit; Patent number
EP1441233
40. Method for etching superconductor materials; Patent number
US4996191